Dash, AK and Mondal, M and Verma, M and Kumar, KS and Singh, A (2021) Effect of electron-irradiation on layered quantum materials. In: Bulletin of Materials Science, 44 (3).
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Abstract
Technological advancement towards the quantum era requires secure communication, quantum computation and ultra-sensitive sensing capabilities. Layered quantum materials (LQMs) have remarkable optoelectronic and quantum properties that can usher us into the quantum era. Electron microscopy is the tool of choice for measuring these LQMs at an atomic and nanometre scale. On the other hand, electron-irradiation of LQMs can modify various material properties, including the creation of structural defects. We review different types of structural defects, as well as electron elastic- and inelastic-scattering induced processes. Controlled modification of optoelectronic and quantum properties of LQMs using electron-irradiation, including creation of single-photon emitters is discussed. Protection of electron-irradiation induced damage of LQMs via encapsulation by other layered materials is encouraged. We finally give insights into challenges and opportunities, including creating novel structures using an electron beam. © 2021, Indian Academy of Sciences.
| Item Type: | Journal Article |
|---|---|
| Publication: | Bulletin of Materials Science |
| Publisher: | Springer |
| Additional Information: | The copyright for this article belongs to Authors |
| Keywords: | Defects; Electrons; Inelastic scattering; Particle beams; Quantum computers; Quantum cryptography, Controlled modification; Elastic and inelastic scattering; Layered material; Quantum properties; Single photon emitters; Structural defect; Technological advancement; Ultra sensitives, Electron irradiation |
| Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 21 Sep 2021 09:32 |
| Last Modified: | 21 Sep 2021 09:32 |
| URI: | http://eprints.iisc.ac.in/id/eprint/69770 |
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