Nambiar, S and Kumar, A and Kallega, R and Ranganath, P and Selvaraja, SK (2019) High-efficiency grating coupler in 400 nm and 500 nm PECVD silicon nitride with bottom reflector. In: IEEE Photonics Journal, 11 (5).
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Abstract
We design and experimentally demonstrate highly efficient Silicon Nitride based grating couplers with bottom distributed Bragg reflectors. All the layers were deposited using plasma enhanced chemical vapor deposition processing. We present gratings on two Silicon Nitride thickness (400 nm and 500 nm) platforms. On a 500 nm thick Silicon Nitride, we show a peak coupling efficiency of �2.29 dB/coupler at a wavelength of 1573 nm with a 1 dB bandwidth of 49 nm. On a 400 nm thick platform, we demonstrate a coupling efficiency of �2.58 dB/coupler at 1576 nm with a 1 dB bandwidth of 52 nm. The demonstrated coupling efficiency is the best reported as yet, for both 400 nm and 500 nm thick, plasma deposited Silicon Nitride platforms. © 2019 Institute of Electrical and Electronics Engineers Inc.. All rights reserved.
| Item Type: | Journal Article |
|---|---|
| Publication: | IEEE Photonics Journal |
| Publisher: | Institute of Electrical and Electronics Engineers Inc. |
| Additional Information: | The copyright for this article belongs to Authors |
| Keywords: | Bandwidth; Efficiency; Plasma CVD; Plasma enhanced chemical vapor deposition; Reflection; Silicon nitride, Coupling efficiency; Grating couplers; High-efficiency; PECVD silicon nitride, Nitrides |
| Department/Centre: | Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering |
| Date Deposited: | 18 Aug 2021 07:18 |
| Last Modified: | 18 Aug 2021 07:18 |
| URI: | http://eprints.iisc.ac.in/id/eprint/69291 |
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