Lampert triangle formation and relaxation behavior in doped poly(3,4-ethylenedioxythiophene) devices

Roy, AP and Mandal, SD and Menon, R (2021) Lampert triangle formation and relaxation behavior in doped poly(3,4-ethylenedioxythiophene) devices. In: Journal of Applied Physics, 129 (19).

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Abstract

The current density-voltage (J-V) characteristics in stainless steel/poly(3,4-ethylenedioxythiophene)/Ag devices show the formation of the complete Lampert triangle (�ABC) bounded by three limiting curves: Ohmic, trap-limited/filling space charge limited conduction, and trap-free/trap-filled space charge limited conduction. From the analysis of the Lampert triangle, values for carrier density (p0) -0.72 � 1013/cm3, mobility (μp) -77.47 � 10-4 cm2/V s, and transit time (tt) -10-12 s are obtained and also the transition voltages for different conduction mechanisms are estimated. The relaxation processes in bulk and interface are observed to be different from temperature-dependent impedance measurements. Estimated values of relaxation times are interface (�1) -10-3 s and bulk (�2) -10-6 s. Two parallel RQ (Q: constant phase element) circuits in series are used to fit the impedance data; however, the model varies for data at 110 and 120 K (two parallel CQ circuits in series). Since the samples have doped carriers, the activation energies are low (< 70 meV), and relaxation times follow Arrhenius behavior. © 2021 Author(s).

Item Type:	Journal Article
Publication:	Journal of Applied Physics
Publisher:	American Institute of Physics Inc.
Additional Information:	The copyright for this article belongs to American Institute of Physics Inc.
Keywords:	Hall mobility; Hole mobility; Relaxation time, 3 ,4-ethylenedioxythiophene; Constant phase element; Current density-voltage characteristics; Impedance measurement; Poly-3 ,4-ethylenedioxythiophene; Relaxation behaviors; Space charge limited conduction; Temperature dependent, Activation energy
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	23 Aug 2021 09:29
Last Modified:	23 Aug 2021 09:29
URI:	http://eprints.iisc.ac.in/id/eprint/69250

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