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Molecular switching operation in gate constricted interface of MoS2 and hBN heterostructure

Tripathi, R and Bhattacharyya, P and Nandi, S and Shukla, A and Misra, A (2021) Molecular switching operation in gate constricted interface of MoS2 and hBN heterostructure. In: Applied Materials Today, 23 .

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Official URL: https://doi.org/10.1016/j.apmt.2021.100999


Combined with diverse two-dimensional (2D) materials for semiconductor interfaces are attractive for electrically controllable carrier confinement to enable excellent electrostatic control. We investigated the transport characteristic in heterointerface of multilayer molybdenum disulfide and hexagonal boron nitride (MoS2/h-BN) to reveal that the charge transfer switching (CTS) is highly dependent on both the local gate constriction and bias applied across the channel. Notably, the CTS is controlled at a molecular level through electrotunable gated constriction. The resulting significant change in conductance due to exposing 100 parts-per-billion of nitrogen dioxide molecules led to a high on/off ratio of 102 for completely switching off the channel thus, acting as a molecular switch. First-principle calculations further explained the mechanism of molecular CTS in the device. The molecular tunability of CTS has not been previously reported in any of the hetero semiconductor interfaces. Our finding opens avenues to exploit various atomically thin heterostructures for the mesoscopic transport phenomena towards molecular switching operation at room temperature. © 2021

Item Type: Journal Article
Publication: Applied Materials Today
Publisher: Elsevier Ltd
Additional Information: The copyright for this article belongs to Elsevier Ltd
Keywords: Charge transfer; Electron tunneling; III-V semiconductors; Layered semiconductors; Molybdenum compounds; Nitrogen oxides; Probes; Sulfur compounds; Switching, Carrier confinements; DFT; Molecular switches; Molecular switching; MoS-2; Semiconductor interfaces; Switching operations; Transfer switching; Tunneling; Two-dimensional, Heterojunctions
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 21 Apr 2021 06:19
Last Modified: 21 Apr 2021 06:19
URI: http://eprints.iisc.ac.in/id/eprint/68624

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