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Kinked silicon nanowires prepared by two-step MACE process: Synthesis strategies and luminescent properties

Adhila, TK and Elangovan, H and Chattopadhyay, K and Barshilia, HC (2021) Kinked silicon nanowires prepared by two-step MACE process: Synthesis strategies and luminescent properties. In: Materials Research Bulletin, 140 .

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Official URL: https://doi.org/10.1016/j.materresbull.2021.111308


We report the controlled fabrication of kinked silicon nanowires (SiNWs) using ethanol mixed facile two-step metal-assisted chemical etching (MACE) method. Accordingly, the kink angle, straight path, and the number of kinks in kinked SiNWs are controlled by varying the volume of ethanol and etching time in high concentrated plating and etching solutions. The silver nanoparticles (AgNPs) during the etching need to travel a critical length (�1.5 μm) in a vertical direction before the kink formation. The presence of ethanol in etching solution affects the availability of H2O2 and HF at Si/Ag interface and has a major effect on the etching process. The room temperature photoluminescence (PL) emission of kinked SiNWs is tuned from the red region to the blue region by controlling the amount of ethanol in the etching solution. The temporal behaviour of the PL data of the kinked SiNWs has been provided to understand in depth the optical transition processes. © 2021 Elsevier Ltd

Item Type: Journal Article
Publication: Materials Research Bulletin
Publisher: Elsevier Ltd
Additional Information: The copyright for this article belongs to Elsevier Ltd
Keywords: Etching; Hydrofluoric acid; Nanowires; Porous silicon; Silica; Silicon oxides; Silver nanoparticles, Chemical-etching process; Etching method; Etching solutions; Ethanol-HF-H2O2 solution; Kinked silicon nanowire; Luminescent property; Metal-assisted chemical etching; Process synthesis; SiO-2/ layer; Synthesis strategy, Ethanol
Department/Centre: Division of Interdisciplinary Sciences > Interdisciplinary Centre for Water Research
Date Deposited: 29 Mar 2021 12:01
Last Modified: 29 Mar 2021 12:01
URI: http://eprints.iisc.ac.in/id/eprint/68571

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