Optimization of Vertical GaN SGT-MOSFET for Low Ron

Jaiswal, NK and Ramakrishnan, VN and Deb Roy, S (2020) Optimization of Vertical GaN SGT-MOSFET for Low Ron. In: 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020, 23-25 Sep 2020, Suita; Japan.

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Abstract

We present a new 600 V breakdown optimized vertical GaN Split-Gate Trench power MOSFET (SGTMOSFET) device with significantly reduced specific on-resistance and lower reverse capacitance. Using TCAD numerical simulations, we demonstrate that the SGTMOSFET exhibits about 30 lower specific on-resistance and about five times reduction in the reverse capacitance when compared to a conventional TG-MOSFET with similar breakdown voltage. © 2020 IEEE.

Item Type:	Conference Paper
Publication:	2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	The copyright for this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Capacitance; Energy gap; Gallium nitride; III-V semiconductors; Power MOSFET, MOS-FET; Specific-on resistance; Split gates, Wide band gap semiconductors
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	22 Mar 2021 11:55
Last Modified:	22 Mar 2021 11:55
URI:	http://eprints.iisc.ac.in/id/eprint/68557

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