Electric-Field-Tunable Valley Zeeman Effect in Bilayer Graphene Heterostructures: Realization of the Spin-Orbit Valve Effect

Tiwari, P and Srivastav, SK and Bid, A (2021) Electric-Field-Tunable Valley Zeeman Effect in Bilayer Graphene Heterostructures: Realization of the Spin-Orbit Valve Effect. In: Physical Review Letters, 126 (9).

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Abstract

We report the discovery of electric-field-induced transition from a topologically trivial to a topologically nontrivial band structure in an atomically sharp heterostructure of bilayer graphene (BLG) and single-layer WSe2 per the theoretical predictions of Gmitra and Fabian Phys. Rev. Lett. 119, 146401 (2017)PRLTAO0031-900710.1103/PhysRevLett.119.146401. Through detailed studies of the quantum correction to the conductance in the BLG, we establish that the band-structure evolution arises from an interplay between proximity-induced strong spin-orbit interaction (SOI) and the layer polarizability in BLG. The low-energy carriers in the BLG experience an effective valley Zeeman SOI that is completely gate tunable to the extent that it can be switched on or off by applying a transverse displacement field or can be controllably transferred between the valence and the conduction band. We demonstrate that this results in the evolution from weak localization to weak antilocalization at a constant electronic density as the net displacement field is tuned from a positive to a negative value with a concomitant SOI-induced splitting of the low-energy bands of the BLG near the K(K�) valley, which is a unique signature of the theoretically predicted spin-orbit valve effect. Our analysis shows that quantum correction to the Drude conductance in Dirac materials with strong induced SOI can only be explained satisfactorily by a theory that accounts for the SOI-induced spin splitting of the BLG low-energy bands. Our results demonstrate the potential for achieving highly tunable devices based on the valley Zeeman effect in dual-gated two-dimensional materials. © 2021 American Physical Society.

Item Type:	Journal Article
Publication:	Physical Review Letters
Publisher:	American Physical Society
Additional Information:	The copyright for this article belongs to American Physical Society
Keywords:	Band structure; Electric fields; Graphene; Landforms; Selenium compounds; Spectroscopy; Topology, Electric field-induced transition; Electronic density; Quantum correction; Spin orbit interactions; Structure evolution; Transverse displacements; Two-dimensional materials; Weak antilocalization, Spin orbit coupling
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	24 Mar 2021 11:19
Last Modified:	24 Mar 2021 11:19
URI:	http://eprints.iisc.ac.in/id/eprint/68511

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