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Anisotropic Interlayer Exciton in GeSe/SnS van der Waals Heterostructure

Maity, N and Srivastava, P and Mishra, H and Shinde, R and Singh, AK (2021) Anisotropic Interlayer Exciton in GeSe/SnS van der Waals Heterostructure. In: Journal of Physical Chemistry Letters . pp. 1765-1771.

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Official URL: https://doi.org/10.1021/acs.jpclett.0c03469


Stacking two or more two-dimensional materials to form a heterostructure is becoming the most effective way to generate new functionalities for specific applications. Herein, using GW and Bethe-Salpeter equation simulations, we demonstrate the generation of linearly polarized, anisotropic intra- and interlayer excitonic bound states in the transition metal monochalcogenide (TMC) GeSe/SnS van der Waals heterostructure. The puckered structure of TMC results in the directional anisotropy in band structure and in the excitonic bound state. Upon the application of compressive/tensile biaxial strain dramatic variation (�3) in excitonic energies, the indirect-to-direct semiconductor transition and the red/blue shift of the optical absorption spectrum are observed. The variations in excitonic energies and optical band gap have been attributed to the change in effective dielectric constant and band dispersion upon the application of biaxial strain. The generation and control over the interlayer excitonic energies can find applications in optoelectronics and optical quantum computers and as a gain medium in lasers. © 2021 American Chemical Society.

Item Type: Journal Article
Publication: Journal of Physical Chemistry Letters
Publisher: American Chemical Society
Additional Information: The copyright for this article belongs to American Chemical Society
Keywords: Absorption spectroscopy; Anisotropy; Energy gap; Germanium compounds; Light absorption; Quantum computers; Transition metals; Van der Waals forces, Band dispersions; Bethe-Salpeter equation; Effective dielectric constants; Excitonic energy; Linearly polarized; Optical quantum computers; Semiconductor transition; Two-dimensional materials, Heterojunctions
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 23 Mar 2021 10:20
Last Modified: 23 Mar 2021 10:20
URI: http://eprints.iisc.ac.in/id/eprint/68407

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