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Ultra-sensitive charge detection and latch memory using MoS2-nanoresonator-based bifurcation amplifiers

Dash, A and More, SK and Arora, N and Naik, AK (2021) Ultra-sensitive charge detection and latch memory using MoS2-nanoresonator-based bifurcation amplifiers. In: Applied Physics Letters, 118 (5).

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Official URL: https://dx.doi.org/10.1063/5.0031890


Bifurcation amplifiers are known for their extremely high sensitivity to weak input signals. We implement a bifurcation amplifier by harnessing the Duffing nonlinearity in a parametrically excited MoS2 nano-electromechanical system. We utilize the ultra-sensitive switching response between the two states of the bifurcation amplifier to detect as well as register charge-fluctuation events. We demonstrate open-loop real-time detection of ultra-low electrical charge perturbations of magnitude <10 e at room temperature. Furthermore, we show latching of the resonator onto one of the two states in response to short-lived charge fluctuations. These charge detectors offer advantages of room-temperature operation and tunable operation in the radio frequency regime, which could open several possibilities in quantum sensing. © 2021 Author(s).

Item Type: Journal Article
Publication: Applied Physics Letters
Publisher: American Institute of Physics Inc.
Additional Information: The copyright of this article belongs to American Institute of Physics Inc.
Keywords: Bifurcation (mathematics); Layered semiconductors; Molybdenum compounds; NEMS, Charge fluctuations; Electrical charges; Nano electromechanical systems; Radio frequencies; Real-time detection; Room-temperature operation; Switching response; Tunable operations, Sulfur compounds
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 05 Mar 2021 09:36
Last Modified: 05 Mar 2021 09:36
URI: http://eprints.iisc.ac.in/id/eprint/68099

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