ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

SnS2/Si nanowire vertical heterostructure for high performance ultra-low power broadband photodetector with excellent detectivity

Das, S and Sarkar, KJ and Pal, B and Mondal, H and Pal, S and Basori, R and Banerji, P (2021) SnS2/Si nanowire vertical heterostructure for high performance ultra-low power broadband photodetector with excellent detectivity. In: Journal of Applied Physics, 129 (5).

jou_app_phy_129-05_2021.pdf - Published Version

Download (3MB) | Preview
[img] Microsoft Word
supplementary_material.doc - Published Supplemental Material

Download (332kB)
Official URL: https://dx.doi.org/10.1063/5.0032604


Nanoparticle-nanowire heterostructures provide a new platform for photodetection applications owing to their higher light absorption, large responsivity, and excellent separation efficiency of photogenerated electron-hole pairs. Herein, we report a SnS2/Si nanowire heterostructure photodetector with excellent optoelectronic properties. A high-quality SnS2/Si nanowire heterostructure was prepared by simply spin coating a wet chemically synthesized SnS2 on a vertically standing Si nanowire made by metal assisted chemical etching. The as-prepared SnS2/Si nanowire heterostructure exhibits a robust p-n junction with excellent photodetector characteristics. The photodetector based on the heterostructure shows a photo-responsivity of �3.8 A W-1, a specific detectivity up to �2 � 1014 Jones, and an on/off ratio up to �102 at 340 nm illumination wavelength with a significantly low optical power density of 53.75 nW/mm2 at zero bias (0 V). The photo-responsivity reached its maximum value of �102 A/W and detectivity of �1 � 1014 Jones at the same wavelength with an applied bias of -2 V. In addition, the heterostructure photodetector provides significantly good photodetector key parameters (responsivity �5.3 A/W, detectivity �7.5 � 1012 Jones, rise/decay time �0.4/0.4 s) at -2 V bias over a wide spectral range from 400 to 1100 nm. The Si nanowire and SnS2 nanoparticle heterostructure devices with an enhanced junction area open up an exciting field for novel non-toxic and environmental friendly broadband optical detection applications and optoelectronic memory devices with high responsivity, ultrahigh sensitivity, and self-sufficient functionality at low power consumption and low cost with ease of processing. © 2021 Author(s).

Item Type: Journal Article
Publication: Journal of Applied Physics
Publisher: American Institute of Physics Inc.
Additional Information: The copyright of this article belongs to American Institute of Physics Inc.
Keywords: Etching; IV-VI semiconductors; Light absorption; Nanoparticles; Nanowires; Photodetectors; Photons; Semiconducting tin compounds; Semiconductor junctions; Silicon; Tin compounds, Environmental-friendly; Heterostructure devices; Heterostructure photodetectors; Metal-assisted chemical etching; Nanowire heterostructures; Optoelectronic properties; Photogenerated electrons; Vertical heterostructure, Sulfur compounds
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 04 Mar 2021 07:58
Last Modified: 04 Mar 2021 07:58
URI: http://eprints.iisc.ac.in/id/eprint/68062

Actions (login required)

View Item View Item