Liquid phase crystallization of Ge over direct Si substrate as a template for GaAs applications

Kumar, S and Avasthi, S (2020) Liquid phase crystallization of Ge over direct Si substrate as a template for GaAs applications. In: Conference Record of the IEEE Photovoltaic Specialists Conference, 15-21 August 2020, Calgary; Canada, pp. 1987-1989.

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Abstract

The direct growth of Ge over Si substrates provides a complementary metal-oxide-semiconductor compatible low-cost way that can be used as a template for GaAs based solar cell and other applications. In this work, the previously reported liquid phase crystallization (LPC) process from our group is used to grow crystalline Ge directly over the Si substrate. No buffer layer is used to relax the lattice mismatch induced strain. The results show a crystalline growth of Ge that is confirmed from x-ray diffraction measurement. The surface morphology is investigated using scanning electron microscope, showing large grain growth in the range from 2-10 µm. The transmission electron microscope investigations show that the threading dislocation densities extend up to 250 nm from the Si/Ge interface. After 250 nm from the Si/Ge interface, the Ge film becomes relaxed and hence, can be used as a template for GaAs based solar cell devices. © 2020 IEEE.

Item Type:	Conference Paper
Publication:	Conference Record of the IEEE Photovoltaic Specialists Conference
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	cited By 0; Conference of 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 ; Conference Date: 15 June 2020 Through 21 August 2020; Conference Code:166353
Keywords:	Buffer layers; CMOS integrated circuits; Gallium arsenide; Germanium metallography; Grain growth; III-V semiconductors; Lattice mismatch; Metals; Morphology; MOS devices; Oxide semiconductors; Scanning electron microscopy; Semiconducting gallium; Semiconducting gallium arsenide; Semiconducting germanium; Substrates; Surface morphology; Transmission electron microscopy, Complementary metal-oxide-semiconductor compatible; Crystalline Ge; Crystalline growth; Direct growth; Induced strain; Solar cell devices; Threading dislocation densities; X-ray diffraction measurements, Silicon solar cells
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	01 Feb 2021 09:48
Last Modified:	01 Feb 2021 09:48
URI:	http://eprints.iisc.ac.in/id/eprint/67888

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