Contact-Barrier Free, High Mobility, Dual-Gated Junctionless Transistor Using Tellurium Nanowire

Dasika, P and Samantaray, D and Murali, K and Abraham, N and Watanbe, K and Taniguchi, T and Ravishankar, N and Majumdar, K (2021) Contact-Barrier Free, High Mobility, Dual-Gated Junctionless Transistor Using Tellurium Nanowire. In: Advanced Functional Materials . (In Press)

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Abstract

The gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology nodes. In particular, the junctionless nanowire transistors are highly scalable with reduced variability due to avoidance of steep source/drain junction formation by ion implantation. Here a dual-gated junctionless nanowire p-type field effect transistor is demonstrated using tellurium nanowire as the channel. The dangling-bond-free surface due to the unique helical crystal structure of the nanowire, coupled with an integration of dangling-bond-free, high quality hBN gate dielectric, allows for a phonon-limited field effect hole mobility of 570 cm2 V�1 s�1 at 270 K, which is well above state-of-the-art strained Si hole mobility. By lowering the temperature, the mobility increases to 1390 cm2 V�1 s�1 and becomes primarily limited by Coulomb scattering. The combination of an electron affinity of �4 eV and a small bandgap of tellurium provides zero Schottky barrier height for hole injection at the metal-contact interface, which is remarkable for reduction of contact resistance in a highly scaled transistor. Exploiting these properties, coupled with the dual-gated operation, we achieve a high drive current of 216 μA μm�1 while maintaining an on-off ratio in excess of 2 � 104. The findings have intriguing prospects for alternate channel material based next-generation electronics. © 2021 Wiley-VCH GmbH

Item Type:	Journal Article
Publication:	Advanced Functional Materials
Publisher:	Wiley-VCH Verlag
Additional Information:	Copyright to the article belongs to Wiley-VCH Verlag
Keywords:	Crystal structure; Dangling bonds; Dielectric materials; Electron affinity; Energy gap; Field effect transistors; Gate dielectrics; Nanowires; Schottky barrier diodes; Tellurium; Tellurium compounds, Electrostatic control; Junctionless transistors; Metal-contact interfaces; Nanowire transistors; Schottky barrier heights; Source/drain junctions; Tellurium nanowires; Vertical integration, Hole mobility
Department/Centre:	Division of Chemical Sciences > Materials Research Centre Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited:	08 Feb 2021 07:02
Last Modified:	08 Feb 2021 07:02
URI:	http://eprints.iisc.ac.in/id/eprint/67869

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