Amorphous Silicon and Carbon Nanotubes Layered Thin-Film Based Device for Temperature Sensing Application

Rojwal, V and Singha, MK and Mondal, TK (2021) Amorphous Silicon and Carbon Nanotubes Layered Thin-Film Based Device for Temperature Sensing Application. In: IEEE Sensors Journal, 21 (3). pp. 2627-2633.

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Abstract

This paper proposes an integrated layered doped and undoped amorphous silicon thin-film based temperature sensing device. Temperature sensing performance has been measured for thin film p-i-n (p-type- intrinsic-n-type) configuration-based diode. Linear dependency of voltage on the temperature for forward-biased diode at a constant bias current is demonstrated in the temperature range of 30 - 200 °C. Further, the same device has been introduced with double-walled carbon nanotubes (DWCNTs) to improve the linearity of the sensor. Comparative performance of two configurations p-i-n and p-i-n/DWCNTs for temperature sensing application has been studied. Moreover, this paper discussed the effect of the DWCNTs on the sensor parameters such as sensitivity, S and coefficient of determination, R2. The maximum sensitivity of the sensor, 22.34 mV/ °C for p-i-n configured device and 21.06 mV/°C for p-i-n/DWCNTs configuration in a biasing current range of 10- 60 mA have been found. We achieved a maximum value of the coefficient of determination equal to 0.99889 for a p-i-n configuration and 0.99922 for a p-i-n/DWCNTs configured device. © 2001-2012 IEEE.

Item Type:	Journal Article
Publication:	IEEE Sensors Journal
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	the copyright of this article belongs toInstitute of Electrical and Electronics Engineers Inc.
Keywords:	Multiwalled carbon nanotubes (MWCN); Nanotubes; Temperature sensors; Thin film circuits; Thin films, Amorphous silicon thin films; Coefficient of determination; Comparative performance; Double-walled carbon nanotubes; Layered thin films; Maximum sensitivity; Temperature sensing; Temperature-sensing device, Amorphous silicon
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	16 Mar 2021 10:58
Last Modified:	16 Mar 2021 10:58
URI:	http://eprints.iisc.ac.in/id/eprint/67795

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