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The effect of dislocation nature on the size effect in Indium Antimonide above and below the brittle-ductile transition

Wheeler, JM and Thilly, L and Zou, Y and Morel, A and Raghavan, R and Michler, J (2020) The effect of dislocation nature on the size effect in Indium Antimonide above and below the brittle-ductile transition. In: MRS Advances, 5 (33-34). pp. 1811-1818.

Full text not available from this repository.
Official URL: https://dx.doi.org/10.1557/adv.2019.369

Abstract

The effect of length scale on mechanical strength is a significant consideration for semiconductor materials. In III-V semiconductors, such as InSb, a transition from partial to perfect dislocations occurs at the brittle-to-ductile transition temperature (�150 °C for InSb). High temperature micro-compression reveals InSb to show a small size effect below the transition, similar to ceramics, while in the ductile regime it shows a size effect consistent with fcc metals. The source truncation model is found to agree with the observed trends in strength with size once the change in Burgers vector and bulk strength are taken into account. Copyright © Materials Research Society 2019.

Item Type: Journal Article
Publication: MRS Advances
Publisher: Materials Research Society
Additional Information: The copyright of this article belongs to Materials Research Society
Keywords: Burgers vector; Indium antimonides; Narrow band gap semiconductors; Semiconducting antimony compounds; Size determination, Brittle ductile transitions; Brittle to ductile transition temperature; Effect of dislocations; High temperature; Indium antimonide; Micro compressions; Small-size effects; Truncation models, III-V semiconductors
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 12 Mar 2021 16:10
Last Modified: 12 Mar 2021 16:11
URI: http://eprints.iisc.ac.in/id/eprint/67496

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