Rahman, MM and Rukmani, K and Sekar, R and Asokan, S (2020) Thermal studies of the effect of thallium in ternary Ge-Te-Tl chalcogenide glasses. In: Journal of Materials Science: Materials in Electronics . (In Press)
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Abstract
Alternating differential scanning calorimetric (ADSC) studies have been carried out on bulk Ge17Te83-xTlx glasses over a wide range of compositions (0 � x � 13), to estimate the thermal parameters and also to understand the effect of thallium addition on the non-isothermal crystallization process. It is found that glass transition temperature (Tg) decreases with increasing thallium concentration, indicating decrease in network connectivity with thallium addition. The decrease in Tg is large in the composition range 0 � x � 6 and much less for compositions x � 7. The observed composition dependence of Tg is similar to the variation in switching voltages with composition and is in close agreement with the variation in the average bond energy. Further, two crystallization temperatures (Tc1 and Tc2) have been observed in Ge17Te83-xTlx glasses, in the composition range 2 � x � 10, which indicates that glasses in this range are phase separated. As these glasses are tellurium rich, it is probable that the regions formed by Te- chains crystallize first and the rest of the matrix crystallizes later. The change in enthalpy due to non-reversing part of the heat flow is very small and fairly constant over the entire range of glasses studied. This indicates that structural re-organization is easy in this system which agrees well with the memory type electrical switching observed in these samples. © 2020, Springer Science+Business Media, LLC, part of Springer Nature.
Item Type: | Journal Article |
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Publication: | Journal of Materials Science: Materials in Electronics |
Publisher: | Springer |
Additional Information: | The copyright of this article belongs to Springer |
Keywords: | Germanium compounds; Glass; Glass transition; Technetium compounds; Thallium, Chalcogenide glass; Composition dependence; Composition ranges; Crystallization temperature; Differential scanning calorimetric; Electrical switching; Nonisothermal crystallization; Thermal parameters, Tellurium compounds |
Department/Centre: | Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics |
Date Deposited: | 18 Jan 2021 09:48 |
Last Modified: | 18 Jan 2021 09:48 |
URI: | http://eprints.iisc.ac.in/id/eprint/67429 |
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