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Thickness-dependent electrical transport in weak topological insulator Bi1Se1

Majhi, K and Banerjee, A and Ganesan, R and Anil Kumar, PS (2020) Thickness-dependent electrical transport in weak topological insulator Bi1Se1. In: Journal of Applied Physics, 128 (16).

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Official URL: https://dx.doi.org/10.1063/5.0014193


Weak topological insulators are elusive topological materials that were subjected to relatively few experimental studies in the past owing to the lack of stable systems. Here, a detailed investigation of the low-temperature electrical transport on Bi 1 Se 1 thin films, a weak topological insulator, over a wide range of thicknesses has been carried out. Robust signatures of weak anti-localization were observed from the electrical transport measurements where the magnetic field is applied perpendicular and parallel to the sample plane. The low-field data are analyzed using the Hikami-Larkin-Nagaoka equation. By combining the transport parameters (α, L �) extracted from both perpendicular and parallel field measurements, our results indicate that apart from three-dimensional bulk states, 2D surface states are also present in our system and their origin could be linked to the weak topological nature of Bi 1 Se 1. © 2020 Author(s).

Item Type: Journal Article
Publication: Journal of Applied Physics
Publisher: American Institute of Physics Inc.
Additional Information: The copyright of this article belongs to American Institute of Physics Inc.
Keywords: Electric insulators; Temperature; Topological insulators, Bulk state; Electrical transport; Electrical transport measurements; Field measurement; Low temperatures; Stable systems; Topological materials; Transport parameters, Topology
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 13 Jan 2021 07:38
Last Modified: 13 Jan 2021 07:38
URI: http://eprints.iisc.ac.in/id/eprint/67348

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