Role of Defect-Induced Interfacial States in Molecular Sensing: Ultrahigh-Sensitivity Region for Molecular Interaction

Tripathi, R and Bhattacharyya, P and Shukla, A and Misra, A (2020) Role of Defect-Induced Interfacial States in Molecular Sensing: Ultrahigh-Sensitivity Region for Molecular Interaction. In: Physical Review Applied, 14 (5).

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Abstract

Defect-induced interfacial states are created in an atomically thin two-dimensional molybdenum-disulfide channel by underlying a narrow pattern of a graphene layer in a field effect transistor. A nondestructive method for the generation of charge states allowed a highly sensitive molecular interaction with sensitivity of nearly 3 orders of magnitude at room temperature. The presence of interfacial states in the channel leads to a conductance fluctuation and its magnitude is modulated using nitrogen-dioxide gas molecules in the subthreshold region. The study provides a systematic approach to establish a correlation between modulated conductance fluctuation and the molecular concentration up to parts per billion. First-principles density-functional theory further explains the role of unique interfacial configuration on conductance fluctuation. Therefore, our study demonstrates an experimental approach to induce charge state for the modulation of carrier concentration and exploits the role of defect-induced interfacial states in atomically thin interfaces for molecular interaction. © 2020 American Physical Society.

Item Type:	Journal Article
Publication:	Physical Review Applied
Publisher:	American Physical Society
Additional Information:	The copyright of this article belongs to American Physical Society
Keywords:	Carrier concentration; Chemical sensors; Defects; Density functional theory; Electric conductance; Field effect transistors; Graphene transistors; Layered semiconductors; Molecular interactions; Molecular structure; Molybdenum compounds; Nitrogen oxides; Sulfur compounds, Conductance fluctuation; Experimental approaches; First-principles density functional theory; Interfacial configurations; Molecular concentration; Nondestructive methods; Sub-threshold regions; Ultra-high-sensitivity, Interface states
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	29 Jan 2021 05:35
Last Modified:	29 Jan 2021 05:35
URI:	http://eprints.iisc.ac.in/id/eprint/67311

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