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Optically controllable memory hysteresis in solution processed Alpo dielectric

Mondal, S (2020) Optically controllable memory hysteresis in solution processed Alpo dielectric. In: AIP Conference Proceedings, 18-22 December 2019, Rajasthan; India.

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Official URL: https://dx.doi.org/10.1063/5.0016760


A optical control of memory hysteresis in terms of capacitance voltage (CV) has been investigated in fully solution processed aluminium oxide (ALPO) dielectric based devices. The CV measurement is performed on metal insulator semiconductor (MIS) structure in presence of different light illumination. The measured CV shows a memory hysteresis (�VFB) of 14.30V in presence of white light illumination (20W) while DC voltage is swept from -15V to 15V and back to -15V (with additional AC voltage of 100mV) at a frequency of 100 kHz. The amplitude of �VFB is decreases to 13.84V while UV light (wavelength of 365nm with power of 25W) was illuminated. The �VFB is even degrading to 13.49 when no light is present. Hence a large variation of memory hysteresis of 810mV is obtained with respect to the variation of the different light illumination. © 2020 American Institute of Physics Inc.. All rights reserved.

Item Type: Conference Paper
Publication: AIP Conference Proceedings
Publisher: American Institute of Physics Inc.
Additional Information: cited By 0; Conference of 64th DAE Solid State Physics Symposium 2019, DAE-SSPS 2019 ; Conference Date: 18 December 2019 Through 22 December 2019; Conference Code:164824
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 15 Feb 2021 08:27
Last Modified: 15 Feb 2021 08:27
URI: http://eprints.iisc.ac.in/id/eprint/67183

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