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Effect of annealing temperature on the optical and structural properties of As40Se50Ge10thin films

Sahoo, D and Aparimita, A and Alagarasan, D and Varadharajaperumal, S and Ganesan, R and Naik, R (2020) Effect of annealing temperature on the optical and structural properties of As40Se50Ge10thin films. In: AIP Conference Proceedings, 18-22 December 2019, Rajasthan; India.

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Official URL: https://dx.doi.org/10.1063/5.0017633


The present paper reports the decrease and increase of optical band gap from the pristine value upon annealing at below and above glass transition temperature of the sample. The thin films of As40Se50Ge10 with 800nm thickness were annealed at 1400C and 1800C. The structural characterization was done by X-ray diffraction and Raman spectroscopy. The optical transmission data was recorded by UV-Visible spectrometer in the wavelength range of 400-1100 nm. The indirect optical bandgap was found to decrease and again increased with change in annealing temperature. The films remain in amorphous state irrespective of the optical change and Raman shift. The surface morphology and composition of the film was checked in FESEM study. © 2020 American Institute of Physics Inc.. All rights reserved.

Item Type: Conference Paper
Publication: AIP Conference Proceedings
Publisher: American Institute of Physics Inc.
Additional Information: cited By 0; Conference of 64th DAE Solid State Physics Symposium 2019, DAE-SSPS 2019 ; Conference Date: 18 December 2019 Through 22 December 2019; Conference Code:164824
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 19 Jan 2021 06:04
Last Modified: 19 Jan 2021 06:04
URI: http://eprints.iisc.ac.in/id/eprint/67180

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