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Pressure-Dependent Behavior of Defect-Modulated Band Structure in Boron Arsenide

Meng, X and Singh, A and Juneja, R and Zhang, Y and Tian, F and Ren, Z and Singh, AK and Shi, L and Lin, JF and Wang, Y (2020) Pressure-Dependent Behavior of Defect-Modulated Band Structure in Boron Arsenide. In: Advanced Materials . (In Press)

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Official URL: https://dx.doi.org/10.1002/adma.202001942


The recent observation of unusually high thermal conductivity exceeding 1000 W m�1 K�1 in single-crystal boron arsenide (BAs) has led to interest in the potential application of this semiconductor for thermal management. Although both the electron/hole high mobilities have been calculated for BAs, there is a lack of experimental investigation of its electronic properties. Here, a photoluminescence (PL) measurement of single-crystal BAs at different temperatures and pressures is reported. The measurements reveal an indirect bandgap and two donor�acceptor pair (DAP) recombination transitions. Based on first-principles calculations and time-of-flight secondary-ion mass spectrometry results, the two DAP transitions are confirmed to originate from Si and C impurities occupying shallow energy levels in the bandgap. High-pressure PL spectra show that the donor level with respect to the conduction band minimum shrinks with increasing pressure, which affects the release of free carriers from defect states. These findings suggest the possibility of strain engineering of the transport properties of BAs for application in electronic devices. © 2020 Wiley-VCH GmbH

Item Type: Journal Article
Publication: Advanced Materials
Publisher: Wiley-VCH Verlag
Additional Information: copyright of this article belongs to Wiley-VCH Verlag
Keywords: Arsenic compounds; Calculations; Crystal impurities; Defects; Electronic properties; Energy gap; Secondary ion mass spectrometry; Single crystals; Thermal conductivity, Conduction-band minimum; Experimental investigations; First-principles calculation; High thermal conductivity; Photoluminescence measurements; Pressure dependent; Strain engineering; Time of flight secondary ion mass spectrometry, III-V semiconductors
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 18 Nov 2020 06:20
Last Modified: 18 Nov 2020 06:20
URI: http://eprints.iisc.ac.in/id/eprint/67018

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