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Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors

Yao, G and Ma, H and Sambandan, S and Nathan, A (2020) Low-Temperature Fully Photolithographic In-Si-O Thin-Film Transistors. In: 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings, 6-21 April 2020, Penang; Malaysia.

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Official URL: https://dx.doi.org/10.1109/EDTM47692.2020.9117859

Abstract

This paper analyses the reliability of In-Si-O (ISO) thin-film transistors (TFT) via bias-stress and photo-stress measurements. The ISO TFTs used in the measurements were developed with a fully photolithographic process, with a maximum temperature of 200 �. Typical performance of ISO TFTs included a mobility of 5.03 cm2/(V·s), a threshold voltage (Vth) of-0.16 V, and a subthreshold swing of 312 mV/dec. In this work, ISO TFTs were biased up to four hours at different temperatures and illumination. Threshold voltage shifts were observed and modeled. Threshold voltage shifted towards the negative, and off-current and subthreshold swings increased when the TFT was exposed to light with wavelengths less than 660 nm. Further investigation indicated that these phenomena were caused by persistent photo-conductivity. This could be compensated for by using a positive gate pulse to remove the light-induced shallow doubly-ionized donor states. © 2020 IEEE.

Item Type: Conference Paper
Publication: 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: cited By 0; Conference of 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 ; Conference Date: 6 April 2020 Through 21 April 2020; Conference Code:161190
Keywords: Manufacture; Photolithography; Silicon compounds; Temperature; Thin film circuits; Thin films; Threshold voltage, Ionized donors; Low temperatures; Maximum temperature; Paper analysis; Persistent Photoconductivity; Photolithographic process; Subthreshold swing; Threshold voltage shifts, Thin film transistors
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 17 Nov 2020 11:29
Last Modified: 17 Nov 2020 11:29
URI: http://eprints.iisc.ac.in/id/eprint/66927

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