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Observation of linear magneto-resistance with small cross-over field at room temperature in bismuth

Chandan, C and Islam, S and Venkataraman, V and Ghosh, A and Angadi, B (2020) Observation of linear magneto-resistance with small cross-over field at room temperature in bismuth. In: Journal of Physics D: Applied Physics, 53 (42).

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Official URL: https://dx.doi.org/10.1088/1361-6463/ab985c


We report the observation of linear magneto-resistance (LMR) with a very low cross-over magnetic field (B c) at room temperature in bismuth(110) thin films fabricated using thermal evaporation. The magneto-resistance at different temperatures (T) indicate that B c has a strong T-dependence, and displays a remarkably small magnitude of 180 mT at T = 300 K. The parameter Φ, defined as the MR (B = 1 T)/ B c is 248, is considerably higher at room temperature compared to values previously reported in literature. The observed LMR is likely due to the recombination of carriers in compensated systems near charge neutrality. Our measurements demonstrate that the LMR can be observed at a very low field and high T, which can be utilized in a variety of applications.

Item Type: Journal Article
Publication: Journal of Physics D: Applied Physics
Publisher: Institute of Physics Publishing
Additional Information: The copyright of this article belongs to Institute of Physics Publishing
Keywords: Bismuth; Thermal evaporation, Charge neutrality; Cross over; High-T; Low field, Magnetoresistance
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 22 Sep 2020 09:05
Last Modified: 22 Sep 2020 09:05
URI: http://eprints.iisc.ac.in/id/eprint/66517

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