Ultrahigh Infrared Photoresponse in Titanium Sesquioxide at Mott-Insulator Transition

Nandi, S and Tripathi, R and Adhikary, GD and Kumar, P and Misra, A (2020) Ultrahigh Infrared Photoresponse in Titanium Sesquioxide at Mott-Insulator Transition. In: Advanced Materials Interfaces .

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Abstract

An ultrahigh infrared (IR) photoresponse is reported in granular titanium sesquioxide (Ti2O3), also known as Mott insulator, at its semiconductor�metal transition temperature of 400 K. Ultrahigh photoresponse is obtained due to the IR radiation induced thermal expansion in Ti-Ti bonding causing a destabilization and depopulation of the band in its metallic state. Moreover, a high voltage responsivity of 1379 V W�1 is achieved, which is significantly higher than any report so far. Both in situ Raman spectroscopy and X-ray diffraction measurements reveal an important insight beyond the semiconductor�metal transition in Ti2O3. Moreover, this study opens avenues to evaluate unprecedented properties of Mott insulators in their transition states. © 2020 Wiley-VCH GmbH

Item Type:	Journal Article
Publication:	Advanced Materials Interfaces
Publisher:	Wiley-VCH Verlag
Additional Information:	The copyright of this article belongs to Wiley-VCH Verlag
Keywords:	High energy physics; Metal insulator transition; Thermal expansion; Titanium alloys; Titanium metallography; Titanium oxides, In-situ Raman spectroscopy; Metal transition; Metal transition temperature; Metallic state; Mott-insulator transition; Photoresponses; Transition state; X-ray diffraction measurements, Mott insulators
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy) Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	02 Sep 2020 11:24
Last Modified:	02 Sep 2020 11:24
URI:	http://eprints.iisc.ac.in/id/eprint/66441

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