Normally-OFF Recessed Gate n-type Junctionless MOSFET for Radio Frequency Applications

Ajay, A (2019) Normally-OFF Recessed Gate n-type Junctionless MOSFET for Radio Frequency Applications. In: 4th International Conference on Electrical, Electronics, Communication, Computer Technologies and Optimization Techniques, ICEECCOT 2019, 13-14 December 2019, GSSS Institute of Engineering and Technology for Women (GSSIETW)Mysuru India, pp. 101-105.

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Abstract

For upcoming technology nodes Junctionless (JL) MOSFET would be a promising candidate because its conduction mechanism dose not dependent on ultra -steep and ultra -sharp junction at source/drain and channel interface. Industry is demanding for the large On-state current with the low leakage current, high doping in JL MOSFET leads depletion mode However, with high doping is required for large ON-state current (ION). Low doping, high workfunction and narrow channel thickness is necessary for enhancement mode JL MOSFET but On-state current is decreases. A new structure is proposed in this work to reduce the earlier mentioned problem. The work has been done with the help of TCAD simulations using Sentaurus. Recessed gate concept has been used to make enhancement mode N-JLMOS with same On-state current and low leakage current. Silicon region is recessed under the gate region and some gate portion is extended towards source and drain region. RF performance of proposed device has also been investigated. © 2019 IEEE.

Item Type:	Conference Paper
Publication:	4th International Conference on Electrical, Electronics, Communication, Computer Technologies and Optimization Techniques, ICEECCOT 2019
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	cited By 0; Conference of 4th International Conference on Electrical, Electronics, Communication, Computer Technologies and Optimization Techniques, ICEECCOT 2019 ; Conference Date: 13 December 2019 Through 14 December 2019; Conference Code:161085
Keywords:	Leakage currents, Channel interface; Conduction Mechanism; Enhancement modes; Low-leakage current; On state current; Radio frequency applications; Source and drains; Technology nodes, MOSFET devices
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	14 Oct 2020 11:34
Last Modified:	14 Oct 2020 11:34
URI:	http://eprints.iisc.ac.in/id/eprint/66397

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