Making Large-Area Titanium Disulfide Films at Reduced Temperature by Balancing the Kinetics of Sulfurization and Roughening

Li, Y and Singh, A and Reidy, K and Jo, SS and Ross, FM and Jaramillo, R (2020) Making Large-Area Titanium Disulfide Films at Reduced Temperature by Balancing the Kinetics of Sulfurization and Roughening. In: Advanced Functional Materials, 30 (36).

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Abstract

The synthesis of large-area TiS2 thin films is reported at temperatures as low as 500 °C using a scalable two-step method of metal film deposition followed by sulfurization in an H2S gas furnace. It is demonstrated that the lowest-achievable sulfurization temperature depends strongly on the oxygen background during sulfurization. This dependence arises because Ti-O bonds present a substantial kinetic and thermodynamic barrier to TiS2 formation. Lowering the sulfurization temperature is important to make smooth films, and to enable integration of TiS2 and related transition metal dichalcogenides�including metastable phases and alloys�into device technology. © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Item Type:	Journal Article
Publication:	Advanced Functional Materials
Publisher:	Wiley-VCH Verlag
Additional Information:	Copy right for this article belongs to Wiley-VCH Verlag
Keywords:	Deposition; Metastable phases; Sulfur compounds; Thin films; Titanium compounds; Transition metal alloys; Transition metals, Device technologies; Metal film deposition; Sulfurization temperature; Thermodynamic barriers; Ti-O bonds; Titanium disulfide; Transition metal dichalcogenides; Two step method, Temperature
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	19 Oct 2020 11:11
Last Modified:	19 Oct 2020 11:11
URI:	http://eprints.iisc.ac.in/id/eprint/66327

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