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Enhancement of open circuit voltage of CdTe solar cell

Venkatesh, R and Banapurmath, NR and Ramesh, K and Venkatesh, A and Khandake, SA and Kurade, PR and Modagi, SM and Nitin, MN and Shettar, AS (2019) Enhancement of open circuit voltage of CdTe solar cell. In: 1st International Conference on Recent Advances in Materials and Manufacturing ICRAMM 2019, 12 September 2019, Karnataka, India, pp. 117-119.

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Official URL: https://dx.doi.org/10.1016/j.matpr.2019.09.035


In the present work, FTO/CdS/CdTe/Te/Al superstrate structured solar cell has been fabricated using thermal evaporation method. A 40 nmthin layer of P-type tellurium has been incorporated between CdTe and back contact to reduce the potential energy barrier by improving the quality of interfaces. The fabricated device characterized using UV-Visible-NIR spectroscopy and I-V measurement. The tellurium interlayer plays a vital role in enhancing the performance of the device. The fabricated device generated open circuit voltage (Voc) of 0.7 V.

Item Type: Conference Paper
Publication: Materials Today: Proceedings
Publisher: Elsevier Ltd
Additional Information: The copyright of this article belongs to Elsevier Ltd
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 28 Aug 2020 08:51
Last Modified: 28 Aug 2020 08:51
URI: http://eprints.iisc.ac.in/id/eprint/66279

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