Gupta, SD and Joshi, V and Chaudhuri, RR and Kr Singh, A and Guha, S and Shrivastava, M (2020) On the Root Cause of Dynamic on Resistance Behavior in AlGaN/GaN HEMTs. In: 2020 IEEE International Reliability Physics Symposium (IRPS), 28 April-30 May 2020, Dallas, TX, USA.
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Official URL: https://dx.doi.org/10.1109/IRPS45951.2020.9128226
Abstract
Channel field and stress time dependent critical voltage in dynamic ON resistance of GaN HEMTs is reported for the first time. Electro-Photo Luminescence, low temperature stress experiments and their dependence on device parameters is correlated to propose a novel channel field and buffer trap interaction mechanism regulating the critical voltage which is not related to new trap generation or hot electrons. © 2020 IEEE.
Item Type: | Conference Paper |
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Publication: | IEEE International Reliability Physics Symposium Proceedings |
Publisher: | Institute of Electrical and Electronics Engineers Inc. |
Additional Information: | cited By 0; Conference of 2020 IEEE International Reliability Physics Symposium, IRPS 2020 ; Conference Date: 28 April 2020 Through 30 May 2020; Conference Code:161550 |
Keywords: | Aluminum gallium nitride; Gallium nitride; III-V semiconductors; Temperature, AlGaN/GaN HEMTs; Critical voltages; Device parameters; Interaction mechanisms; Low temperatures; On-resistance; Stress time; Trap generation, Dynamics |
Department/Centre: | Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) |
Date Deposited: | 13 Oct 2020 11:28 |
Last Modified: | 13 Oct 2020 11:28 |
URI: | http://eprints.iisc.ac.in/id/eprint/66177 |
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