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Green synthesis of germanium nano ink and inkjet printing of Si/Ge heterostructure

Elangovan, H and Maske, A and Narayanan, R and Ramamurthy, PC and Chattopadhyay, K (2020) Green synthesis of germanium nano ink and inkjet printing of Si/Ge heterostructure. In: Materials Research Bulletin, 132 .

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Official URL: https://dx.doi.org/10.1016/j.materresbull.2020.110...


We present a green route of synthesis of germanium nanocrystals by cryomilling. The particles (� 80 nm) are further functionalized with acrylic acid and dispersed in the isopropyl alcohol (IPA) medium to obtain colloidal ink suitable for inkjet printing under ambient atmosphere to form device grade structure. Printing on silicon wafers presents a complex problem of coffee-ring pattern formation that hinders the printing quality. Enhancing the printing quality can be realized by controlling the hydrophobicity of the silicon surface by optimizing termination of the surface bond through a cleaning protocol and temperature of printing. Through a simple model architecture using n-type Si (001) substrate, the diode performance of the Si/Ge printed heterostructure that has the potential to evolve into a cost-effective development of semiconducting devices is demonstrated. © 2020 Elsevier Ltd

Item Type: Journal Article
Publication: Materials Research Bulletin
Publisher: Elsevier Ltd
Additional Information: copy right for this article belongs to Elsevier Ltd
Keywords: Cost effectiveness; Green Synthesis; Ink; Ink jet printing; Semiconducting germanium; Silicon compounds, Ambient atmosphere; Cleaning protocols; Complex problems; Germanium nanocrystals; Isopropyl alcohols; Printing quality; Si (001) substrate; Silicon surfaces, Silicon wafers
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Interdisciplinary Sciences > Interdisciplinary Centre for Energy Research
Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 15 Dec 2020 11:00
Last Modified: 15 Dec 2020 11:00
URI: http://eprints.iisc.ac.in/id/eprint/66132

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