Group II�VI semiconductor quantum dot heterojunction photodiode for mid wave infrared detection

Chatterjee, A and Abhale, A and Pendyala, N and Rao, KSRK (2020) Group II�VI semiconductor quantum dot heterojunction photodiode for mid wave infrared detection. In: Optoelectronics Letters, 16 (4). pp. 290-292.

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Abstract

In this article we report the development of 10�10 photodiode array by realizing heterojunction between mercury cadmium telluride (HgCdTe) quantum dot (diameter �14 nm) and silicon responsive in mid wave infrared (MWIR) range (λ=3�5 µm) at room temperature. Performance of this optical sensor has been evaluated experimentally and Detectivity of 1.6�108cmHz/W has been achieved at spectral wavelength of 3.5 µm at 300 K. This work ascertains the compatibility of chemically synthesized HgCdTe quantum dots with commercially available direct injection type readout integrated circuits (ROIC) for the development of low cost large format MWIR focal plane array (FPA). © 2020, Tianjin University of Technology and Springer-Verlag GmbH Germany, part of Springer Nature.

Item Type:	Journal Article
Publication:	Optoelectronics Letters
Publisher:	Springer Verlag
Additional Information:	Copy right for this article belongs to Springer Verlag
Keywords:	Cadmium alloys; Cadmium telluride; Costs; Direct injection; Heterojunctions; II-VI semiconductors; Infrared radiation; Mercury amalgams; Mercury compounds; Nanocrystals; Narrow band gap semiconductors; Photodiodes; Semiconductor alloys, Detectivity; Heterojunction photodiodes; Large format; Low costs; Mercury cadmium telluride; Mid wave infrared (MWIR); Photodiode arrays; Readout integrated circuits, Semiconductor quantum dots
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	15 Dec 2020 09:24
Last Modified:	15 Dec 2020 09:24
URI:	http://eprints.iisc.ac.in/id/eprint/66096

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