Different types of band alignment at MoS2/(Al, Ga, In)N heterointerfaces

Singh, DK and Roul, B and Pant, R and Chowdhury, AM and Nanda, KK and Krupanidhi, SB (2020) Different types of band alignment at MoS2/(Al, Ga, In)N heterointerfaces. In: Applied Physics Letters, 116 (25).

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Abstract

Heterojunction band offset parameters are critical for designing and fabricating junction-based devices as these parameters play a crucial role in determining the optical and electronic properties of a device. Herein, we report the band discontinuities at the MoS2/III-nitride (InN, GaN, and AlN) heterointerfaces. Few-layer MoS2 thin films are deposited by pulsed laser deposition on III-nitrides/c-sapphire substrates. Band offsets valence band offset (VBO) and conduction band offset (CBO) at the heterojunctions are determined by high-resolution X-ray photoelectron spectroscopy. The estimated band alignments are found to be type-I (VBO: 2.34 eV, CBO: 2.59 eV), type-II (VBO: 2.38 eV, CBO: 0.32 eV), and type-III (VBO: 2.23 eV, CBO: 2.87 eV) for MoS2/AlN, MoS2/GaN, and MoS2/InN, respectively. Such determination of the band offsets of 2D/3D heterojunctions paves a way to understand and design the futuristic photonic and electronic devices using these material systems. © 2020 Author(s).

Item Type:	Journal Article
Publication:	Applied Physics Letters
Publisher:	American Institute of Physics Inc.
Additional Information:	The copyright of this article belongs to American Institute of Physics Inc.
Keywords:	Aluminum nitride; Electron energy levels; Electronic properties; Gallium nitride; Heterojunctions; III-V semiconductors; Indium compounds; Molybdenum compounds; Pulsed laser deposition; X ray photoelectron spectroscopy, Band discontinuities; Conduction band offset; Electronic device; Hetero-interfaces; High resolution; Material systems; Optical and electronic properties; Valence band offsets, Layered semiconductors
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	26 Aug 2020 04:34
Last Modified:	26 Aug 2020 04:34
URI:	http://eprints.iisc.ac.in/id/eprint/66048

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