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20 kW, 50 kHz SiC power converter for high speed switched reluctance machine

Ahmad, SS and Urabinahatti, C and Narayanan, G (2020) 20 kW, 50 kHz SiC power converter for high speed switched reluctance machine. In: 9th IEEE Power India International Conference, PIICON 2020, 28 February- 1 March, 2020, SonePat, India.

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Official URL: https://dx.doi.org/10.1109/PIICON49524.2020.911290...


This paper reports design and testing of an SiC devices based three phase asymmetric H-bridge converter capable of switching at 50 kHz and intended to drive high-speed switched reluctance machines of speeds up-to 50, 000 rpm. The power converter architecture is presented. Selection of SiC MOSFETs and diodes for the given power rating and specifications are discussed. Other subsystems of the converter are also described. Test results are presented for the asymmetric H-bridge converter at 800 V dc bus voltage and 50 A of load current. The MOSFET and diode losses are calculated for the given test condition. The respective junction temperatures and the heat-sink temperature are also estimated. Thermal image is presented for validation of estimated heat-sink temperature. The power converter is used to operate two high-speed SRM prototypes. © 2020 IEEE.

Item Type: Conference Paper
Publication: PIICON 2020 - 9th IEEE Power India International Conference
Publisher: Institute of Electrical and Electronics Engineers Inc.
Additional Information: The copyright of this article belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords: Bridge circuits; Heat sinks; MOSFET devices; Power semiconductor diodes; Silicon; Silicon carbide; Silicon compounds, Converter architecture; DC-bus voltages; Heat sink temperature; Junction temperatures; Power ratings; Switched Reluctance Machine; Test condition; Thermal images, Power converters
Department/Centre: Division of Electrical Sciences > Electrical Engineering
Date Deposited: 24 Aug 2020 11:37
Last Modified: 24 Aug 2020 11:37
URI: http://eprints.iisc.ac.in/id/eprint/65991

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