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Electronic structure studies of FeSi: A chiral topological system

Changdar, S and Aswartham, S and Bose, A and Kushnirenko, Y and Shipunov, G and Plumb, NC and Shi, M and Narayan, A and Büchner, B and Thirupathaiah, S and Thirupathaiah, S (2020) Electronic structure studies of FeSi: A chiral topological system. In: Physical Review B, 101 (23).

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Official URL: https://doi.org/10.1103/PhysRevB.101.235105

Abstract

Most recent observations of topological Fermi arcs on the surface of manyfold degenerate B20 systems, CoSi and RhSi, have attracted enormous research interests. Although another isostructural system, FeSi, has been predicted to show bulk chiral fermions, it is yet to be clear theoretically and as well experimentally that whether FeSi possesses the topological surface Fermi arcs associated with the exotic chiral fermions in vicinity of the Fermi level. In this contribution, using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), we present the low-energy electronic structure of FeSi. We further report the surface state calculations to provide insights into the surface band structure of FeSi near the Fermi level. Unlike in CoSi or RhSi, FeSi has no topological Fermi arcs near the Fermi level as confirmed both from ARPES and surface state calculations. Further, the ARPES data show spin-orbit coupling (SOC) band splitting of 40 meV, which is in good agreement with bulk band-structure calculations. We noticed an anomalous temperature-dependent resistivity in FeSi which can be understood through the electron-phonon interactions as we find a Debye energy of 80 meV from the ARPES data. © 2020 American Physical Society.

Item Type: Journal Article
Publication: Physical Review B
Publisher: American Physical Society
Additional Information: Copyright for this article belongs to the American Physical Society
Keywords: Band structure; Cobalt compounds; Density functional theory; Electron-phonon interactions; Electronic structure; Electrons; Fermi level; Iron compounds; Photoelectron spectroscopy; Rhodium compounds; Silicon; Silicon compounds; Spin orbit coupling; Surface states; Topology, Angle resolved photoemission spectroscopy; Band splitting; Band structure calculation; Isostructural; Research interests; Surface band structures; Temperature-dependent resistivity; Topological systems, Boron compounds
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 10 Nov 2021 14:30
Last Modified: 10 Nov 2021 14:30
URI: http://eprints.iisc.ac.in/id/eprint/65974

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