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Resistances and ESD Reliability Study of Core-Shell Channel Junctionless DG MOSFET

Ajay, S (2020) Resistances and ESD Reliability Study of Core-Shell Channel Junctionless DG MOSFET. In: Silicon . (In Press)

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Official URL: https://dx.doi.org/10.1007/s12633-020-00527-w


In this article, an investigation has been done to address the resistance and reliability issues with Conventional Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor (Conv. JL DG MOSFET). Due to the uniform doping (concentration range is 1 � 1018 cm�3-1 � 1019 cm�3) in Conv. JL DG MOSFET, the contact resistance at source and drain region is large which degrades the performance of devices. The increment in doping of source and drain region reduces the contact resistance but simultaneously it increases leakage in Conv. JL DG MOSFET. To address above mentioned issues, a new architecture has been discussed which is called Core-Shell Channel (CSC) JL DG MOSFET. The CSC JL DG MOSFET is offering low leakage current with highly doped concentration of impurity in source and drain. The first time electrostatic discharge (ESD) reliability investigation has been done for any JL MOSFET and CSC JL DG MOSFET. © 2020, Springer Nature B.V.

Item Type: Journal Article
Publication: Silicon
Publisher: Springer
Additional Information: Copy right for this article belongs to Springer
Keywords: Core-Shell . Capacitance . Contact and channel resistance . Double gate . Junctionless MOSFET . Electrostatic discharge
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited: 12 Oct 2020 09:42
Last Modified: 12 Oct 2020 09:42
URI: http://eprints.iisc.ac.in/id/eprint/65884

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