Anomalous current-voltage and impedance behaviour in doped Poly 3-methylthiophene devices

Anjaneyulu, P and Varade, V and Sangeeth, CSS and Menon, R (2020) Anomalous current-voltage and impedance behaviour in doped Poly 3-methylthiophene devices. In: Journal of Physics D: Applied Physics, 53 (29).

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Abstract

Current-voltage (I-V) and impedance measurements are performed on electrochemically-doped poly(3-methylthiophene) (P3MeT) devices in metal/polymer/metal sandwich geometry. The detailed investigation shows the presence of negative differential resistance (NDR) in the sandwich devices with different metals in action as substrate and top electrode. It is found that the reiteration of I-V measurements significantly enhances the NDR. The P3MeT devices shows a considerable switching behaviour with ON to OFF ratio varying between two to three order but lacks the consistency in bias stress test. An anomalous behaviour in the impedance measurements in the form of a prolonged tail is observed in Cole-Cole plots towards lower frequency region, which gets more prominent with applied bias. This impedance anomaly is explained in terms of large distribution of relaxation times arising due to long lived trap states at the bulk and interface which is correlated with the NDR observed in P3MeT devices. © 2020 IOP Publishing Ltd.

Item Type:	Journal Article
Publication:	Journal of Physics D: Applied Physics
Publisher:	Institute of Physics Publishing
Additional Information:	Copy right for this article belongs to Institute of Physics Publishing
Keywords:	Electric impedance measurement; Interface states, Current voltage; I-V measurements; Impedance measurement; Lower frequencies; Negative differential resistances; Poly (3-methylthiophene); Sandwich devices; Sandwich geometry, Bias voltage
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	06 Nov 2020 10:54
Last Modified:	06 Nov 2020 10:54
URI:	http://eprints.iisc.ac.in/id/eprint/65849

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