Impedance measurements in undoped and doped regioregular poly(3-hexylthiophene)

Mandal, S and Menon, R (2020) Impedance measurements in undoped and doped regioregular poly(3-hexylthiophene). In: Journal of Physics D: Applied Physics, 53 (21).

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Abstract

The semiconducting properties of regioregular poly(3-hexylthiophene) are characterized by impedance measurements, from 40 Hz to 100 MHz. X-ray diffraction shows the presence of both ordered and disordered regions. The analysis of impedance data by Nyquist plots show two semi-circular arcs, and their size is reduced by dc bias. Also, the carrier variation by light and chemical doping alters the shape and size of arcs. The fits to the data and equivalent circuits show considerable changes in the resistive, capacitive and constant-phase element parameters as the carrier density increases. The increase in carrier density reduces the relaxation time in ordered regions, and it does not alter much in disordered regions.

Item Type:	Journal Article
Publication:	Journal of Physics D: Applied Physics
Publisher:	Institute of Physics Publishing
Additional Information:	The copyright of this article belongs to Institute of Physics Publishing
Keywords:	Carrier concentration; Equivalent circuits, Chemical doping; Constant phase element; Disordered regions; Impedance data; Impedance measurement; Poly (3-hexylthiophene); Semi-conducting property; Shape and size, Electric impedance measurement
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	23 Jun 2020 09:39
Last Modified:	23 Jun 2020 09:39
URI:	http://eprints.iisc.ac.in/id/eprint/65482

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