Effect of accelerated thermal cyclic loading on structural reliability of cu-filled TSV

Sonawane, D and Kumar, P (2019) Effect of accelerated thermal cyclic loading on structural reliability of cu-filled TSV. In: 2019 IEEE 21st Electronics Packaging Technology Conference (EPTC), 4-6 Dec. 2019, Singapore, Singapore, pp. 1-5.

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Abstract

Through Si Via (TSV) has emerged as one of the promising technologies for the 3D integration of the microelectronics packages. However, difference in the coefficient of the thermal expansion of Si and Cu leads to generation of large thermal stresses in these structures when subjected to thermal excursions either during post fabrication processes or service period due to on-off cycles of device. In here, accelerated thermal cycling tests were carried out in the temperature range of-50 to 150°C with two different heating cooling rates on the TSV samples. It was observed that slow heating-cooling cycling causes extrusion of few Cu grains near the Cu-Si interface which was not observed when samples were subjected to the fast-thermal cycling. Also, at few locations along the interface, Cu-Si reaction occurrence signs were observed. Finite element analysis (FEA) which was performed to gain more insights into the experimental results suggests that creep strain accumulated near interface of Cu-Si was higher in the magnitude in case of the slow thermal cycling compare to the faster one. From the stress measurement using the FEA, it was also understood that the Cu-Si interface gets subjected to large stresses during thermal cycling. Therefore, it can cause the degradation of the diffusion barrier layer and can pave the pathway for the Cu-Si reaction to happen.

Item Type:	Conference Paper
Publication:	2019 IEEE 21st Electronics Packaging Technology Conference, EPTC 2019
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	cited By 0; Conference of 21st IEEE Electronics Packaging Technology Conference, EPTC 2019 ; Conference Date: 4 December 2019 Through 6 December 2019; Conference Code:158393
Keywords:	Copper; Diffusion barriers; Electronics packaging; Microelectronics; Silicon compounds; Thermal cycling; Thermal expansion; Three dimensional integrated circuits, Accelerated thermal cycling test; Diffusion barrier layers; Fast thermal cycling; Microelectronics packages; Structural reliability; Thermal cyclic loading; Thermal excursion; Through si via (TSV), Silicon
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	21 Sep 2020 09:06
Last Modified:	21 Sep 2020 09:06
URI:	http://eprints.iisc.ac.in/id/eprint/65205

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