High-Speed Cavity Enhanced Silicon Photodetector on SiN-SOI Platform for Short Reach Optical Datacom

Chatterjee, A and Yadav, S and Sikdar, SK and Kumar Selvaraja, S (2019) High-Speed Cavity Enhanced Silicon Photodetector on SiN-SOI Platform for Short Reach Optical Datacom. In: Workshop on Recent Advances in Photonics, WRAP 2019, 13-14 December 2019, Guwahati, India.

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Abstract

We demonstrate on-chip integrated, high-speed cavity-enhanced Silicon MSM photodetector on SiN-SOI platform for short-reach optical datacom at 850 nm wavelength. Silicon MSM photodetector is integrated inside a SiN ring resonator cavity. Compare to the conventional waveguide integrated photodetector the proposed device achieves 10X fold enhancement in responsivity at 850 nm wavelength. High-speed characterization of the proposed device is performed by capturing the impulse response of the device with illumination of femtosecond duration pulse laser at 850 nm wavelength. We measure 3dB bandwidth of 6.1 GHz which can be further be improved suitable for datacoms and supercomputers. © 2019 IEEE.

Item Type:	Conference Paper
Publication:	2019 Workshop on Recent Advances in Photonics, WRAP 2019
Publisher:	Institute of Electrical and Electronics Engineers Inc.
Additional Information:	Copyright of this article of belongs to Institute of Electrical and Electronics Engineers Inc.
Keywords:	Impulse response; Photons; Silicon; Silicon nitride; Supercomputers; Waveguides, 3 dB bandwidth; Femtoseconds; MSM photodetector; Responsivity; Ring resonator; Silicon photo-detector; SiN-SOI; Waveguide-integrated photodetector, Photodetectors
Department/Centre:	Division of Biological Sciences > Molecular Biophysics Unit Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	23 Apr 2021 10:05
Last Modified:	23 Apr 2021 10:05
URI:	http://eprints.iisc.ac.in/id/eprint/65091

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