Ahmed, T and Islam, S and Paul, T and Hariharan, N and Elizabeth, S and Ghosh, A (2020) A generic method to control hysteresis and memory effect in Van der Waals hybrids. In: Materials Research Express, 7 (1).
|
PDF
A GEN_MET_CON-7_1-2020.pdf - Published Version Download (1MB) | Preview |
Abstract
The diverse properties of two-dimensional materials have been utilized in a variety of architecture to fabricate high quality electronic circuit elements. Here we demonstrate a generic method to control hysteresis and stable memory effect in Van der Waals hybrids with a floating gate as the base layer. The floating gate can be charged with a global back gate-voltage, which it can retain in a stable manner. Such devices can provide a very high, leakage-free effective gate-voltage on the field-effect transistors due to effective capacitance amplification, which also leads to reduced input power requirements on electronic devices. The capacitance amplification factor of �10 can be further enhanced by increasing the area of the floating gate. We have exploited this method to achieve highly durable memory action multiple genre of ultra-thin 2D channels, including graphene, MoS2, and topological insulators at room temperature.
| Item Type: | Journal Article |
|---|---|
| Publication: | Materials Research Express |
| Publisher: | Institute of Physics Publishing |
| Additional Information: | This article belongs to Institute of Physics Publishing |
| Keywords: | Capacitance; Hysteresis; Layered semiconductors; Molybdenum compounds; Threshold voltage; Van der Waals forces, Amplification factors; Back-gate voltages; Diverse properties; Effective capacitance; Electronic device; Temperature memory effects; Two-dimensional materials; Van der waals, Field effect transistors |
| Department/Centre: | Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering Division of Physical & Mathematical Sciences > Physics |
| Date Deposited: | 31 Aug 2020 09:20 |
| Last Modified: | 31 Aug 2020 09:20 |
| URI: | http://eprints.iisc.ac.in/id/eprint/64977 |
Actions (login required)
 |
View Item |
