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A generic method to control hysteresis and memory effect in Van der Waals hybrids

Ahmed, T and Islam, S and Paul, T and Hariharan, N and Elizabeth, S and Ghosh, A (2020) A generic method to control hysteresis and memory effect in Van der Waals hybrids. In: Materials Research Express, 7 (1).

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Official URL: https://dx.doi.org/10.1088/2053-1591/ab6923


The diverse properties of two-dimensional materials have been utilized in a variety of architecture to fabricate high quality electronic circuit elements. Here we demonstrate a generic method to control hysteresis and stable memory effect in Van der Waals hybrids with a floating gate as the base layer. The floating gate can be charged with a global back gate-voltage, which it can retain in a stable manner. Such devices can provide a very high, leakage-free effective gate-voltage on the field-effect transistors due to effective capacitance amplification, which also leads to reduced input power requirements on electronic devices. The capacitance amplification factor of �10 can be further enhanced by increasing the area of the floating gate. We have exploited this method to achieve highly durable memory action multiple genre of ultra-thin 2D channels, including graphene, MoS2, and topological insulators at room temperature.

Item Type: Journal Article
Publication: Materials Research Express
Publisher: Institute of Physics Publishing
Additional Information: This article belongs to Institute of Physics Publishing
Keywords: Capacitance; Hysteresis; Layered semiconductors; Molybdenum compounds; Threshold voltage; Van der Waals forces, Amplification factors; Back-gate voltages; Diverse properties; Effective capacitance; Electronic device; Temperature memory effects; Two-dimensional materials; Van der waals, Field effect transistors
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Division of Physical & Mathematical Sciences > Physics
Date Deposited: 31 Aug 2020 09:20
Last Modified: 31 Aug 2020 09:20
URI: http://eprints.iisc.ac.in/id/eprint/64977

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