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Advances in Ga2O3 solar-blind UV photodetectors

Pratiyush, AS and Krishnamoorthy, S and Muralidharan, R and Rajan, S and Nath, DN (2018) Advances in Ga2O3 solar-blind UV photodetectors. [Book Chapter]

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Official URL: https://doi.org/10.1016/B978-0-12-814521-0.00016-6


An overview of β-Ga2O3-based UV photodetectors (PD) as well as their status and promises are presented in this chapter. UV detectors and their applications are highlighted in the introduction followed by a brief discussion on β-Ga2O3 and its many potentials and challenges. The figures of merit for a PD are touched upon, especially from the point of view of UV detection. β-Ga2O3 UV detector configurations such as metal-semiconductor-metal (MSM) and Schottky diodes are discussed, and their recent advances and state-of-the-art results are presented in parallel. A comparison in terms of device performance between β-Ga2O3 and the competing III-nitride technology for UV detection is also highlighted. Finally, the future outlook and challenges associated with this emerging UV technology are summarized. © 2019 Elsevier Inc. All rights reserved.

Item Type: Book Chapter
Publication: Gallium Oxide: Technology, Devices and Applications
Series.: Metal Oxides Series
Publisher: Elsevier
Additional Information: The Copyright of this chapter belongs to Elsevier
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 23 Aug 2021 07:01
Last Modified: 23 Aug 2021 08:07
URI: http://eprints.iisc.ac.in/id/eprint/64838

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