ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Defect engineering of VO2 thin films synthesized by Chemical Vapor Deposition

Rajeswaran, B and Umarji, AM (2020) Defect engineering of VO2 thin films synthesized by Chemical Vapor Deposition. In: Materials Chemistry and Physics, 245 .

[img] PDF
mat_che_phy_245_2020.pdf - Published Version
Restricted to Registered users only

Download (1MB) | Request a copy
[img] Microsoft Word
1-s2.0-S0254058419310454-mmc1.doc - Published Supplemental Material

Download (741kB)
Official URL: https://dx.doi.org/10.1016/j.matchemphys.2019.1222...


Vanadium dioxide (VO2) has been a much sought after candidate for many electronics and photonics based applications. These applications demand CMOS compatibility and simple but scalable synthesis procedure. Herein we report the deposition of VO2 on CMOS compatible Si substrates via easily scalable Metal Organic Chemical Vapor Deposition (MOCVD) at different substrate temperatures between 520 and 550 °C. The morphology of the films deposited at different growth temperatures varied drastically despite retaining VO2 in the M1 phase. This was verified by XRD and Raman experiments. The thin films deposited at 535 °C showed sharp grain boundaries with a grain size of about 200 nm. Similarly, the electrical characteristics of the films deposited at 535 °C showed superior transition compared to the films deposited at other temperatures. However the films deposited at 550 °C retained the superiority in the transition strength, the transition width and the hysteresis of the transition increased at that temperatures. We understand that the reason for this observed behavior is the fraction of surface defects. It is seen from XPS measurements that vanadium was available in V3+, V4+ and V5+ oxidation states and the fractions of these individual components varied in all the thin films deposited at different temperatures. We believe that the defects fraction can give a handle to control the nature and quality of the transition in VO2.

Item Type: Journal Article
Publication: Materials Chemistry and Physics
Publisher: Elsevier
Additional Information: The copyright of this article belongs to Elsevier
Keywords: CMOS integrated circuits; Defects; Grain boundaries; Metallorganic chemical vapor deposition; Morphology; Organic chemicals; Organometallics; Oxygen vacancies; Substrates; Surface defects; Vanadium dioxide; X ray photoelectron spectroscopy, A3. metal organic chemical vapor deposition (MOCVD); CMOS compatibility; Different substrates; Electrical characteristic; Individual components; Scalable synthesis; Substrate temperature; Transition strengths, Thin films
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 09 Mar 2020 10:24
Last Modified: 09 Mar 2020 10:24
URI: http://eprints.iisc.ac.in/id/eprint/64776

Actions (login required)

View Item View Item