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Fabrication of smooth thin film of vanadium oxides (VO x) using pulsed laser deposition

Bhardwaj, D and Singh, DK and Krupanidhi, SB and Umarji, AM (2020) Fabrication of smooth thin film of vanadium oxides (VO x) using pulsed laser deposition. In: Applied Physics A: Materials Science and Processing, 126 (3).

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Official URL: https://dx.doi.org/10.1007/s00339-020-3310-5


We report the synthesis of vanadium oxide thin films by the pulsed laser deposition under different parameter conditions on Si/SiO 2 substrates using V 2O 5 target. The objective of the present work was to achieve smooth VO 2 thin film in a single step. Synergistic effect of the deposition parameters on the phase of vanadium oxides is studied by a series of experiments designed using Taguchi analysis. Conditions for depositing different oxides of vanadium like VO 2, V 2O 3, V 3O 5 and a new phase, V 7O 16 was established. The range of parameters varied were: gas pressure: 10 - 3�5 � 10 - 2 mbar; temperature: 500�700 �C; target-substrate distance: 30�40 mm and laser energy: 100�200 mJ. VO 2 film with surface roughness of 3.68 nm having a semiconductor-to-metal transition (SMT) at 72 �C with 2�3 orders of resistance change was achieved. Taguchi model was statistically analyzed to determine the suitable condition as well as effect of deposition parameters to obtain phase pure VO 2 thin film. The optimum condition for deposition was found to be: gas pressure: 5 � 10 - 2 mbar; temperature: 600 �C; distance: 35 mm, and laser energy: 200 mJ after analyzing using Taguchi model.

Item Type: Journal Article
Publication: Applied Physics A: Materials Science and Processing
Publisher: Springer
Additional Information: copyright for this article belongs to Springer
Keywords: Oxide films; Oxides; Pulsed laser deposition; Pulsed lasers; Raman spectroscopy; Semiconductor lasers; Silicon compounds; Substrates; Surface mount technology; Surface roughness; Taguchi methods; Vanadium dioxide; Vanadium pentoxide, Deposition Parameters; Optimum conditions; Parameter conditions; Semiconductor-to-metal transitions; Suitable conditions; Target-substrate distance; Vanadium oxide thin films; Vanadium oxides, Thin films
Department/Centre: Division of Chemical Sciences > Materials Research Centre
Date Deposited: 01 Jul 2020 09:50
Last Modified: 01 Jul 2020 09:50
URI: http://eprints.iisc.ac.in/id/eprint/64578

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