Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors

Kumar, S and Dolmanan, SB and Tripathy, S and Muralidharan, R and Nath, DN (2020) Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors. In: Physica Status Solidi (A) Applications and Materials Science .

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Abstract

Herein, a unique device-design strategy is reported for increasing the breakdown voltage and hence Baliga figure of merit (BFOM) of III-nitride high electron mobility transistors (HEMTs) by engineering the gate edge toward the drain. The breakdown of such devices with meandering gate-drain access region (M-HEMT) are found to be 62 more compared with that of conventional HEMT whereas the on-resistance suffers by 76, leading to an overall improvement in the BFOM for by 28. The 3D technology computer-aided design simulations show that the decrease in the peak electric field at the gate edge was responsible for increased breakdown voltage.

Item Type:	Journal Article
Publication:	Physica Status Solidi (A) Applications and Materials Science
Publisher:	Wiley-VCH Verlag
Additional Information:	Copyright of this article belongs to Wiley-VCH Verlag
Keywords:	Aluminum gallium nitride; Electric breakdown; Electron gas; Electron mobility; Electronic design automation; Electrons; Gallium nitride; III-V semiconductors, 2-D electron gas; 3D technology; AlGaN/GaN high electron mobility transistors; Figure of merits; High electron mobility transistor (HEMTs); On-resistance; Peak electric field; Voltage enhancements, High electron mobility transistors
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	06 Feb 2020 08:21
Last Modified:	06 Feb 2020 08:21
URI:	http://eprints.iisc.ac.in/id/eprint/64475

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