Safe Operating Area of Polarization Super-junction GaN HEMTs and Diodes

Shankar, Bhawani and Shrivastava, Mayank (2019) Safe Operating Area of Polarization Super-junction GaN HEMTs and Diodes. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (10). pp. 4140-4147.

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Abstract

This article reports safe operating area (SOA) assessment in polarization super-junction (PSJ)-based GaN high-electron mobility transistor (HEMT) and Schottky diode. The degradation physics, which limits SOA in these devices under high-voltage and high-current-injection conditions is presented. Trap-induced SOA degradation and the role of PSJ in SOA improvement are unveiled. In PSJ-field-effect transistor (FET), the impact of PSJ length and its position on SOA robustness are studied. The role of self-heating and substrate effect on degradation are discussed. PSJ diodes with different configurations of Schottky contact are investigated. The correlation between PSJ length and failure threshold is discovered, besides power and field dependence of SOA boundary. Compared with their conventional counterparts, unique failure modes are discovered in PSJ-based GaN HEMT and diode.

Item Type:	Journal Article
Publication:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Publisher:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Additional Information:	Copyright of this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords:	GaN field-effect transistor (FET); polarization super-junction (PSJ); reliability; safe operating area (SOA)
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	12 Dec 2019 06:43
Last Modified:	12 Dec 2019 06:43
URI:	http://eprints.iisc.ac.in/id/eprint/63973

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