Oxygen vacancy induced anomalous Raman mode in intrinsic ZnO film

Mondal, Praloy (2019) Oxygen vacancy induced anomalous Raman mode in intrinsic ZnO film. In: VIBRATIONAL SPECTROSCOPY, 103 .

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Abstract

ZnO network were prepared by a simple solution procedure due to its simplicity and cost effectiveness that has been calcined at different temperatures. With increasing the calcination temperature the preferred crystal-lographic orientation shifts from < 002 > to < 103 > direction. Additional Raman modes have been accounted in a number of current literatures compacting with intrinsic and doped ZnO layers but no clear justification has been given. Here we propose that disorder-activated Raman scattering commences increasingly growing second order Raman peak, (B-1(high) - B-1(low)) originated by the breakdown of translational equilibrium of the crystal by the O-vacancy induced defects and changes direction from preferred c-axis orientation with I-< 103 >/I-< 002 (>) > 1. At higher calcination temperatures O-vacancies have the inferior formation energy. The high-concentration of O-vacancy defect which assembles the < 103 > crystallographic orientation and the momentous strong anomalous Raman mode are projected to move forward clarification of the mechanisms of defect induced Raman mode and raise the opto-electronic relevance of ZnO matrix.

Item Type:	Journal Article
Publication:	VIBRATIONAL SPECTROSCOPY
Publisher:	nanoparticles and their application as varistor materials, J. Mater. Chem. 14 (2004) 1572–1578. [7] K. Liu, M. Sakurai, M. Aono, ZnO-based ultraviolet photodetectors, Sensors 9 (2010) 8604–8634. [8] U. Özgür, Y.I. Alivov, C. Liu, A. Teke, M.A. Reshchikov,
Additional Information:	The copyright to this article belongs to ELSEVIER
Keywords:	ZnO; < 103> orientation; Raman spectra; O-vacancy
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	13 Nov 2019 17:09
Last Modified:	13 Nov 2019 17:09
URI:	http://eprints.iisc.ac.in/id/eprint/63906

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