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Phonon limited anisotropic quantum transport in phosphorene field effect transistors

Brahma, Madhuchhanda and Kabiraj, Arnab and Bescond, Marc and Mahapatra, Santanu (2019) Phonon limited anisotropic quantum transport in phosphorene field effect transistors. In: JOURNAL OF APPLIED PHYSICS, 126 (11).

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Official URL: https://dx.doi.org/10.1063/1.5109057


Electron-phonon coupling limited transport in phosphorene metal oxide semiconductor field effect transistors (MOSFETs) is studied along the armchair (AC) and zigzag (ZZ) directions. In a multiscale approach, the unit cell of phosphorene is first relaxed, and the band structure is calculated using hybrid density functional theory (DFT). The transport equations are then solved quantum mechanically under the nonequilibrium Green's function formalism using DFT-calibrated two-band k.p hamiltonian. The treatment of electron-phonon scattering is done under the self-consistent Born approximation in conjunction with deformation potential theory. It is found that optical phonon modes are largely responsible for degradation of ON-current apart from p-channel AC MOSFET where acoustic phonon modes play a stronger role. It is further observed that electron-phonon scattering is more pronounced in the ZZ direction, whereas the diffusive ON-current of p-MOSFET in a given direction is higher than n-MOSFET. Further study on the complex band structure of phosphorene reveals band wrapping within the bandgap region in the AC direction and multiple crossings in the ZZ direction. This signifies strong phonon-assisted tunneling in the ZZ direction in comparison with the AC direction. For completeness, drain current in the AC tunnel field effect transistor is calculated, and electron-phonon scattering is observed only in the near vicinity of the OFF-current.

Item Type: Journal Article
Additional Information: copyright for this article belongs to AMER INST PHYSICS
Department/Centre: Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 23 Oct 2019 09:39
Last Modified: 23 Oct 2019 09:39
URI: http://eprints.iisc.ac.in/id/eprint/63777

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