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Low-Temperature Processing of Printed Field-Effect Transistors from Sublimating-Stabilizer Derived Oxide Nanodispersions

Divya, Mitta and Sethuraman, Sivaramakrishnan and Devabharathi, Nehru and Mondal, Sandeep Kumar and Dasgupta, Subho (2019) Low-Temperature Processing of Printed Field-Effect Transistors from Sublimating-Stabilizer Derived Oxide Nanodispersions. In: ADVANCED ELECTRONIC MATERIALS, 5 (7).

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Official URL: http://doi.org/10.1002/aelm.201800764


Oxide semiconductors are becoming an increasingly attractive choice for solution processed/printed transistors and circuits, as they possess numerous critical advantages over the other printable semiconductor technologies, such as abundance, low-cost, environmental/thermal stability, nontoxicity, and most importantly, excellent electronic transport properties. However, on the downside, there are also major challenges, one of which is their high process temperatures, especially when they are processed from oxide precursors. In order to address this limitation, here, a general recipe for low temperature curable nanodispersions/nanoinks is proposed using aromatic surfactants that sublimates near room temperature. In this regard, stable nanoinks from In2O3 nanoparticles, with high particle loading, are developed using an inexpensive, nontoxic aromatic compound thymol as the stabilizer; while, thymol sublimates near room temperature (<40 degrees C), a quick heating at 100 degrees C is carried out to ensure its complete removal. The printed field-effect transistors from thymol-stabilized nanoinks show an on/off ratio >10(7), a maximum device mobility of 13.5 cm(2) V-1 s(-1), and transconductance values as high as 10 mu S mu m(-1). It is believed that this general route to obtain low temperature curable electronic grade nanodispersions may find applications beyond the printed logic electronics demonstrated in the present study.

Item Type: Journal Article
Publisher: WILEY
Additional Information: Copyright of this article belongs to WILEY, 111 RIVER ST, HOBOKEN 07030-5774, NJ USA
Keywords: field-effect transistors; low-temperature processing; oxide semiconductors; printed electronics; sublimating stabilizers
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 03 Feb 2020 07:30
Last Modified: 03 Feb 2020 07:30
URI: http://eprints.iisc.ac.in/id/eprint/63464

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