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Concurrent Subthermionic and Strong Thermionic Transport in Inkjet-Printed Indium Zinc Oxide/Silver Hybrid-Channel Field-Effect Transistors

Behera, Sunil Kumar and Devabharathi, Nehru and Pradhan, Jyoti Ranjan and Mondal, Sandeep Kumar and Dasgupta, Subho (2019) Concurrent Subthermionic and Strong Thermionic Transport in Inkjet-Printed Indium Zinc Oxide/Silver Hybrid-Channel Field-Effect Transistors. In: ADVANCED ELECTRONIC MATERIALS, 5 (10).

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Official URL: https://dx.doi.org/10.1002/aelm.201900401


Subthreshold slope of field-effect transistors (FETs) less than the fundamental Boltzmann limit (60 mV dec(-1) at 300 K) is demonstrated either using band-to-band tunneling or negative capacitance (NC) ferroelectric-gate transistors. However, it is difficult to replicate both of these strategies in solution-processed/printed FETs. Nonetheless, it is shown that the use of a metal-insulator-metal-semiconductor architecture alongside electrolyte gating can simultaneously create highly reproducible static negative capacitance behavior in printed FETs, resulting in subthermionic transport for over four decades of drain currents with a subthreshold slope as low as 16 mV dec(-1), and thereafter a strong thermionic transport regime, characterized by an unprecedented On-current of 195 mu A mu m(-1), a transconductance of 215 mu S mu m, and a metal-like On-state resistance of only 96 omega. The present device architecture is analogous to typical metal oxide semiconductor field-effect transistor (MOSFET) geometry with printed amorphous indium zinc oxide (a-IZO) as the semiconductor material, besides an additional metal layer on top of the a-IZO channel that reduces the actual semiconducting channel dimension to the thickness of the printed a-IZO layer. While the steep slope subthermionic transport regime can be utilized at wearable sensor interfaces, the high On-currents/channel conductance can be used in optoelectronic applications, high-current switches, and amplifiers.

Item Type: Journal Article
Publisher: WILEY
Additional Information: Copyright of this article belongs to WILEY
Keywords: electrolyte gating; narrow-channel FETs; negative capacitance; printed electronics; subthermionic transport
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 24 Dec 2019 10:12
Last Modified: 24 Dec 2019 10:12
URI: http://eprints.iisc.ac.in/id/eprint/63412

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