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2D layering of silicon nanocrystals at TiO2/CuI heterojunction for enhanced charge transport

Elangovan, Hemaprabha and Kesavan, Arul Varman and Chattopadhyay, Kamanio and Ramamurthy, Praveen C (2019) 2D layering of silicon nanocrystals at TiO2/CuI heterojunction for enhanced charge transport. In: JOURNAL OF APPLIED PHYSICS, 125 (24).

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Official URL: https://dx.doi.org/10.1063/1.5093958


We prepared a two-dimensional layer of silicon nanoparticles at the CuI/TiO2 p-n junction heterophase interface by spray coating of colloidal ink of nanoparticles. The particles are prepared by a physical process of milling at room temperature and further etched to obtain a nanometric size distribution with a mode at similar to 2nm. These particles at the interface act as traps for electrons. However, the traps fill up quickly in a diode configuration due to the dense band structure of the nanoparticles, and overflowed electrons can tunnel through the junction, thereby significantly increasing the efficiency as reflected by a large increase in the diode current. A qualitative model is developed in terms of discrete band states at the interface to explain the above phenomena. The results offer opportunities for developing high-performance semiconducting devices.

Item Type: Journal Article
Additional Information: copyright this article belongs to AMER INST PHYSICS
Department/Centre: Division of Interdisciplinary Sciences > Interdisciplinary Centre for Energy Research
Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 27 Aug 2019 06:21
Last Modified: 27 Aug 2019 06:21
URI: http://eprints.iisc.ac.in/id/eprint/63316

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