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High-Q On-Chip C-Band Inductor With a Nanocrystalline MnZn-Ferrite Film Core

Sai, Ranajit and Kahmei, Ralandinliu RD and Shivashankar, SA and Yamaguchi, Masahiro (2019) High-Q On-Chip C-Band Inductor With a Nanocrystalline MnZn-Ferrite Film Core. In: IEEE TRANSACTIONS ON MAGNETICS, 55 (7).

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Official URL: https://dx.doi.org/10.1109/TMAG.2019.2916699


The miniaturized on-chip inductor was developed for the C-band (4-8 GHz) and beyond, to meet the requirements of upcoming 5G technology devices. This paper presents the deposition of nanocrystalline manganese-zinc ferrite (MnxZn1-xFe2O4; x = 0.5) thin films in a CMOS-compatible way on top of an on-chip inductor structure. A 200 nm-thick film was conformally deposited directly on a foundry-fabricated inductor after removing the top passivation layer by dry etching. The Q-factor is found to be enhanced by 10% at the upper end (8 GHz) of the C-band, while the self-resonance frequency of the inductor is up-shifted to 21 from 16 GHz. The film on a dummy Si (100) substrate exhibits saturation magnetization (4 pi M-S = 160 mT) and coercivity (H-C = 3.5 mT) much lower than for the bulk material. The film was deposited by a rapid (<5 min) and low-temperature (<200 degrees C) solution-based process under microwave irradiation (2.45 GHz) of 300 W. This is the first report of an on-chip C-band inductor with a manganese-zinc ferrite film core.

Item Type: Journal Article
Additional Information: copyright for this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords: C-band; inductor; manganese-zinc ferrite; Q-factor
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 11 Sep 2019 10:52
Last Modified: 13 Nov 2019 04:58
URI: http://eprints.iisc.ac.in/id/eprint/63261

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