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Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization

Tu, Rong and Hu, Zhiying and Xu, Qingfang and Li, Lin and Yang, Meijun and Li, Qizhong and Shi, Ji and Li, Haiwen and Zhang, Song and Zhang, Lianmeng and Gotoa, Takashi and Ohmori, Hitoshi and Kosinova, Marina and Basu, Bikramjit (2019) Epitaxial growth of 3C-SiC (111) on Si via laser CVD carbonization. In: JOURNAL OF ASIAN CERAMIC SOCIETIES .

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Official URL: https://dx.doi.org/10.1080/21870764.2019.1631995


A qualitative and quantitative study was performed on the carbonization temperature (T-C) and carbonization time (t(C)) with respect to the microstructure and growth rate (R-g) of a 3C-SiC epitaxial layer on Si (111) substrates by carbonization via laser chemical vapor deposition (LCVD). The results showed that the density and size of the voids depended strongly on T-C. The voids were sealed, and thin films were formed continuously and uniformly after a carbonization time of 6 min at T-C = 1200 degrees C. R-g was also dependent on T-C, and increased from 0.43 to 1.35 mu m center dot h(-1) with increases in T-C from 1000 to 1200 degrees C. These deposition rates are 10 to 100 times greater than those of observed for conventional CVD methods.

Item Type: Journal Article
Additional Information: copyright for this article belongs to TAYLOR & FRANCIS LTD
Department/Centre: Division of Interdisciplinary Sciences > Centre for Biosystems Science and Engineering
Date Deposited: 13 Aug 2019 08:00
Last Modified: 13 Aug 2019 08:00
URI: http://eprints.iisc.ac.in/id/eprint/63232

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